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High Strength Thermoplastic Bonding for Multi-channel, Multi-layer Lab-on-Chip Devices for Ocean and Environmental applications

机译:用于海洋和环境应用的多通道,多层芯片实验室设备的高强度热塑性键合

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摘要

A solvent-vapour thermoplastic bonding process is reported which provides high strength bonding of PMMA over a large area for multi-channel and multi-layer microfluidic devices with shallow high resolution channel features. The bond process utilises a low temperature vacuum thermal fusion step with prior exposure of the substrate to chloroform (CHCl3) vapour to reduce bond temperature to below the PMMA glass transition temperature. Peak tensile and shear bond strengths greater than 3 MPa were achieved for a typical channel depth reduction of 25 µm. The device-equivalent bond performance was evaluated for multiple layers and high resolution channel features using double-side and single-side exposure of the bonding pieces. A single-sided exposure process was achieved which is suited to multi-layer bonding with channel alignment at the expense of greater depth loss and a reduction in peak bond strength. However, leak and burst tests demonstrate bond integrity up to at least 10 bar channel pressure over the full substrate area of 100 mm x 100 mm. The inclusion of metal tracks within the bond resulted in no loss of performance. The vertical wall integrity between channels was found to be compromised by solvent permeation for wall thicknesses of 100 µm which has implications for high resolution serpentine structures. Bond strength is reduced considerably for multi-layer patterned substrates where features on each layer are not aligned, despite the presence of an intermediate blank substrate. Overall a high performance bond process has been developed that has the potential to meet the stringent specifications for lab-on-chip deployment in harsh environmental conditions for applications such as deep ocean profiling.
机译:据报道,溶剂蒸汽热塑性粘合工艺可为具有浅高分辨率通道特征的多通道和多层微流体装置提供大面积的PMMA高强度粘合。粘合工艺利用低温真空热熔步骤,先将基材暴露在氯仿(CHCl3)蒸汽中,以将粘合温度降低到PMMA玻璃化转变温度以下。对于典型的通道深度减小25 µm,可实现大于3 MPa的峰值拉伸和剪切粘结强度。使用键合片的双面和单面曝光对多层和高分辨率通道特征的器件等效键合性能进行了评估。实现了单面曝光工艺,该工艺适用于通道对准的多层粘合,但要付出更大的深度损失和峰值粘合强度的降低。但是,泄漏和爆裂测试表明,在100 mm x 100 mm的整个基板面积上,通道完整性在至少10 bar的通道压力下仍保持完整。键中包含金属迹线不会导致性能损失。发现壁厚为100 µm时,溶剂渗透会损害通道之间的垂直壁完整性,这对高分辨率蛇形结构有影响。尽管存在中间的空白衬底,但对于每层上的特征均未对准的多层图案化衬底,粘结强度显着降低。总的来说,已经开发出一种高性能的键合工艺,它有可能满足在恶劣环境条件下(例如深海剖析)中片上实验室部署的严格规范。

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